杭州电子科技大学图书馆书目检索系统

Online Public Access Catalogue

题名/责任者:

CMOS past, present and future / Henry H. Radamson, Jun Luo, Eddy Simoen, Chao Zhao.

出版发行项:

Duxford : Woodhead Publishing, 2018.

ISBN:

9780081021392

载体形态项:

vii, 263 pages : illustrations (some color) ; 24 cm.

丛编说明:

Woodhead Publishing series in electronic and optical materials

丛编统一题名:

Woodhead Publishing series in electronic and optical materials.

附加个人名称:

Luo, Jun, author.

附加个人名称:

Simoen, E. (Eddy), author.

附加个人名称:

Zhao, Chao, author.

论题主题:

Metal oxide semiconductors, Complementary.

中图法分类号:

TN432

书目附注:

Includes bibliographical references and index.

内容附注:

1. Brief introduction CMOS applications in our daily life; 2. Basic definitions and equations; 3. Electrical measurements (IV, short channel effects, mobility and noise); 4. CMOS Architecture; 5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners); 6. High-k and metal gate (Almost all known high-k materials and metal gates); 7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds); 8. Contacts (Silicide formation, contact resistance, parasitic contacts); 9. Integration with photonic components (CMOS with lasers, detectors); 10. Technology roadmap (starting from 50's to unknown future); 11. Authors' final words.

摘要附注:

CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.

豆瓣简介：