杭州电子科技大学图书馆书目检索系统

Online Public Access Catalogue

题名/责任者:

Next generation spin torque memories / Brajesh Kumar Kaushik ... [et al.].

出版发行项:

Singapore : Springer, 2017.

ISBN:

9789811027192 (pbk.)

ISBN:

9811027196 (pbk.)

载体形态项:

xvii, 92 p. : ill. ; 24 cm.

丛编说明:

SpringerBriefs in applied sciences and technology, 2191-530X

丛编统一题名:

SpringerBriefs in applied sciences and technology.

附加个人名称:

Kaushik, Brajesh Kumar.

论题主题:

Microelectronics.

论题主题:

Nanotechnology.

论题主题:

Spintronics.

中图法分类号:

TN4

书目附注:

Includes bibliographical references.

内容附注:

Preface; Contents; About the Authors; 1 Emerging Memory Technologies; 1.1 Introduction; 1.2 Non-volatile Memories; 1.2.1 Phase Change Memory; 1.2.2 Resistive RAM; 1.2.3 Ferroelectric RAM; 1.2.4 Magnetoresistive RAM; 1.3 Spin Torque Based Memories; 1.3.1 Spin Transfer Torque MRAM; 1.3.2 Spin Orbit Torque MRAM; 1.3.3 Domain Wall MRAM; 1.4 Comparison of Emerging Memory Technologies; 1.5 Chapter Summary; References; 2 Next Generation 3-D Spin Transfer Torque Magneto-resistive Random Access Memories; 2.1 Overview of Conventional STT MRAM: Architecture and Operation; 2.2 Cell Size in Memories.

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