机读格式显示(MARC)
- 000 00965cam a22002897a 4500
- 008 080807s2008 njua b 001 0 eng d
- 035 __ |a (OCoLC)ocn185032763
- 040 __ |a BTCTA |c BTCTA |d YDXCP |d BAKER |d OCLCQ |d DLC
- 050 00 |a TK7895.M4 |b T455 2008
- 082 00 |a 621.39/732 |2 22
- 245 00 |a Terrestrial neutron-induced soft errors in advanced memory devices / |c Takashi Nakamura ... [et al.].
- 260 __ |a Hackensack, NJ : |b World Scientific, |c c2008.
- 300 __ |a xxii, 343 p. : |b ill. (some col.) ; |c 24 cm.
- 504 __ |a Includes bibliographical references (p. 291-315) and index.
- 650 _0 |a Semiconductor storage devices.
- 650 _0 |a Neutron irradiation.
- 650 _0 |a Radiation dosimetry.
- 650 _0 |a Nuclear physics.
- 700 1_ |a Nakamura, Takashi, |d 1939-