245 00 |a CMOS past, present and future / |c Henry H. Radamson, Jun Luo, Eddy Simoen, Chao Zhao.

505 0_ |a 1. Brief introduction CMOS applications in our daily life; 2. Basic definitions and equations; 3. Electrical measurements (IV, short channel effects, mobility and noise); 4. CMOS Architecture; 5. Strain engineering (stressor materials in source/drain regions, strain induced by processing, stress liners); 6. High-k and metal gate (Almost all known high-k materials and metal gates); 7. Channel materials (Ge, GeSn, SiGe, Graphene and other II-D crystals, III-V compounds); 8. Contacts (Silicide formation, contact resistance, parasitic contacts); 9. Integration with photonic components (CMOS with lasers, detectors); 10. Technology roadmap (starting from 50's to unknown future); 11. Authors' final words.

520 __ |a CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends. The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.