机读格式显示(MARC)

• 000 01193nam a22003018a 4500

• 001 0000375062

• 003 OCoLC

• 005 20100925100700.0

• 008 090526s2009 enka b 001 0 eng

• 010 __ |a 2009021528

• 020 __ |a 9781848211636

• 020 __ |a 1848211635

• 035 __ |a (OCoLC)367421290

• 040 __ |a DLC |c DLC |d CDX |d BWKUK |d BWX |d YDXCP

• 041 1_ |a eng |h fre

• 050 00 |a QC611.8.M4 |b P4713 2009

• 082 00 |a 621.3815/2 |2 22

• 090 __ |a TN432/BG1

• 093 __ |a TN432 |2 4

• 130 0_ |a Physique des dispositifs pour circuits int鈋gr鈋s silicium. |l English.

• 245 10 |a Physics and operation of silicon devices in integrated circuits / |c edited by Jacques Gautier.

• 260 __ |a London : |b ISTE ; |a Hoboken, NJ : |b Wiley, |c 2009.

• 300 __ |a xxi, 373 p. : |b ill. ; |c 24 cm.

• 504 __ |a Includes bibliographical references and index.

• 505 0_ |a Physical basis of semiconductor materials -- Transport in semiconductor devices -- Mosfet device physics and operation -- Soi technology and transistors -- Bipolar junction transistors, physics, and technology -- Non-volatile memories.

• 650 _0 |a Metal oxide semiconductors.

• 700 1_ |a Gautier, Jacques, |d 1948-

• 920 __ |a 233030 |z 2